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INTEGRATED CIRCUITS
DATA SHEET
TEA1064B Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
Product specification File under Integrated Circuits, IC03A March 1994
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
FEATURES * Low DC line voltage; operates down to 1.8 V (excluding polarity guard) * Voltage regulator with low voltage drop and adjustable static resistance * DC line voltage adjustment facility * Provides a supply for external circuits * Dynamic limiting (speech-controlled) in transmit direction prevents distortion of line signal and sidetone * Symmetrical high-impedance inputs (64 k) for dynamic, magnetic or piezo-electric microphones * Asymmetrical high-impedance input (32 k) for electret microphones * DTMF signal input * Confidence tone in the earpiece during DTMF dialling * Mute input for disabling speech during pulse or DTMF dialling * Power-down input for improved performance during pulse dial or register recall (flash) * Receiving amplifier for dynamic, magnetic or piezo-electric earpieces ORDERING INFORMATION EXTENDED TYPE NUMBER TEA1064B TEA1064BT Notes 1. SOT146-1; 1998 Jun 18. 2. SOT163-1; 1998 Jun 18. PACKAGE PINS 20 20 PIN POSITION DIL mini-pack MATERIAL plastic plastic
TEA1064B
* Large amplification setting ranges on microphone and earpiece amplifiers * Line loss compensation (line current dependent) for microphone and earpiece amplifiers (not used for DTMF amplifier) * Gain control curve adaptable to exchange supply * Automatic disabling of the DTMF amplifier in extremely-low voltage conditions * Microphone MUTE function available with switch * MUTE, POWER-DOWN and DTMF input reference (pin VEE2) can be connected either to VEE1 or SLPE. GENERAL DESCRIPTION The TEA1064B is a bipolar integrated circuit that performs all the speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech. The IC operates at line voltages down to 1.8 V DC (with reduced performance) to facilitate the use of more telephone sets connected in parallel. The transmit signal on the line is dynamically limited (speech-controlled) to prevent distortion at high transmit levels of both the sending signal and the sidetone.
CODE SOT146(1) SO20; SOT163A(2)
March 1994
2
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
QUICK REFERENCE DATA SYMBOL Iline PARAMETER line current operating range normal operation with reduced performance ICC internal supply current power-down input LOW power-down input HIGH Gv voltage gain range microphone amplifier receiving amplifier line loss compensation ranges Gv Vexch Rexch VLN(p-p) gain control exchange supply voltage exchange feeding bridge resistance maximum output voltage swing on LN (peak-to-peak value) R16 = 392 ; Iline = 15 mA Ip = 1.4 mA Ip = 2.7 mA Vp supply for peripherals Iline = 15 mA Ip = 1.4 mA Ip = 2.7 mA; RREG-SLPE = 20 k VLN DC line voltage Iline = 15 mA without RREG-SLPE RREG-SLPE = 20 k Tamb Note operating ambient temperature range 3.25 4.05 -25 3.5 4.4 - 2.5 2.9 2.7 3.1 3.55 3.25 3.80 3.50 5.7 36 400 6.1 - - 44 20 - - VCC = 2.8 V - - 1.3 60 note 1 11 2 - - CONDITIONS MIN. TYP.
TEA1064B
MAX. 140 11 1.6 82 52 45 6.5 60 1000
UNIT mA mA mA A dB dB dB V
4.05 3.75 - -
V V V V
3.75 4.75 +75
V V C
1. For the TEA1064BT the maximum line current depends on the heat dissipating qualities of the mounted device.
March 1994
3
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
handbook, full pagewidth
VCC 16 13
LN 1 6 GAR QR+ QR-
IR
- TEA1064B +
+ -
5 4
MIC+ MIC-
9 8
+ - +
dB
2
GAS1
- +
3 GAS2
DTMF MUTE PD
12 14 15
-
SUPPLY AND REFERENCE AGC CIRCUIT LOW VOLTAGE CIRCUIT
DYNAMIC LIMITER
CURRENT REFERENCE 11 VEE1 19 17 18 AGC 10 STAB
START CIRCUIT 7 DLS/MMUTE 20 SLPE
MBA442
VEE2 REG
Fig.1 Block diagram.
March 1994
4
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
PINNING SYMBOL LN GAS1 GAS2 QR- QR+ GAR DLS/MMUTE MIC- MIC+ STAB VEE1 DTMF IR MUTE PD VCC REG AGC VEE2 SLPE PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 positive line terminal gain adjustment; transmitting amplifier gain adjustment; transmitting amplifier inverting output; receiving amplifier non-inverting output; receiving amplifier gain adjustment; receiving amplifier DESCRIPTION
TEA1064B
decoupling for transmit amplifier dynamic and microphone MUTE input inverting microphone input non-inverting microphone input current stabilizer negative line terminal dual-tone multi-frequency input receiving amplifier input mute input power-down input internal supply decoupling voltage regulator decoupling automatic gain control input reference for POWER-DOWN (PD), MUTE and DTMF slope adjustment for DC curve/reference for peripheral circuits
handbook, halfpage
LN GAS1 GAS2 QR- QR+ GAR DLS/MMUTE MIC- MIC+
1 2 3 4 5
20 SLPE 19 VEE2 18 AGC 17 REG 16 VCC
TEA1064B
6 7 8 9 15 PD 14 MUTE 13 IR 12 DTMF 11 VEE1
MBA433
STAB 10
Fig.2 Pin configuration.
March 1994
5
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
FUNCTIONAL DESCRIPTION Supplies VCC, VEE2, LN, SLPE, REG and STAB (Figs 3 and 5) Power for the TEA1064B and its peripheral circuits is usually obtained from the telephone line. The IC develops its own supply voltage at VCC and regulates its voltage drop. The internal supply requires a decoupling capacitor between VCC and VEE1. The internal current stabilizer is set by a 3.6 k resistor between STAB and VEE1. The DC current flowing into the set is determined by the exchange supply voltage Vexch, the feeding bridge resistance Rexch, the subscriber line DC resistance Rline and the DC voltage (including polarity guard) on the subscriber set (see Fig.3). The internal voltage regulator generates a temperature-compensated reference voltage that is available between LN and SLPE (Vref = VLN-SLPE = 3.23 V typ.). This internal voltage regulator requires decoupling by a capacitor between REG and VEE1 (C3).
TEA1064B
The configuration shown in Fig.3, gives a stabilized voltage across pins LN and SLPE which, applied via the low-pass filter R16, C15, provides a supply to the peripherals that is independant of the line current and depends only on the peripheral supply current. The value of R16 and the level of the DC voltage VLN-SLPE determine the supply capabilities. In the basic application R16 = 392 and C15 = 220 F. The worst-case peripheral supply current as a function of supply voltage is shown in Fig.4. To increase the supply capabilities, the value of R16 can be decreased or the DC voltage VLN-SLPE can be increased by using RVA(REG-SLPE). Note The TEA1064B application is the same as is used for TEA1060/TEA1061, TEA1067 and TEA1068 integrated circuits.
handbook, full pagewidth
Ip + 0.25 mA Rline Iline ISLPE + 0.25 mA LN Rexch 1 R1 ICC VCC 16
TEA1064B
DC AC
0.25 mA
C1
R16
Vexch
17 REG C3
10 STAB R5
20 SLPE
11
19 Ip C15 peripheral circuits
VEE1 VEE2
R9
Vp
MBA435
The voltage VLN-SLPE is fixed to Vref = 3.323 0.25 V. Resistor R16 together with the line current determine the supply capabilities and the maximum output swing on the line (no loop damping is necessary). The line voltage VLN = Vref + ({Iline - 1.55 mA} x R9).
Fig.3 Supply arrangement with reference to SLPE.
March 1994
6
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
MBA436
handbook, halfpage
5
Ip (mA) 4
3
R VA (R -S EG
2
RV ut PE tho SL wi EGR A(
LP E) =2
1
0k
)
0 2 3 4 Vp (V) 5
Iline = 15 mA; R16 = 392 ; valid for MUTE = 0 and 1. Line current has very little influence.
Fig.4
Maximum supply current with respect to Fig.3 for peripherals (Ip) as a function of the peripheral supply voltage (Vp).
handbook, full pagewidth
Rline
Iline
R1 ICC LN 1 VCC 16 Ip
ISLPE + 0.25 mA
TEA1064B
Rexch DC AC Vexch 17 REG C3 10 STAB R5
0.25 mA C1 20 SLPE R9 11 VEE1 19 VEE2 peripheral circuits
MBA432
Fig.5 Supply arrangement with reference to VEE1.
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
handbook, halfpage
2.4
MBA434
VCC). MUTE, PD and DTMF are then referenced to VEE1 and the pin VEE2 must therefore be connected to VEE1. If the line current Iline exceeds ICC + 0.25 mA, the voltage converter shunts the excess current to SLPE via LN; where ICC 1.3 mA, the value required by the IC for normal operation. The DC line voltage on LN is: * VLN = VLN-SLPE + (ISLPE x R9) * VLN = Vref + ({Iline - ICC - 0.25 x 10-3 A} x R9) in which: * Vref = 3.23 V 0.25 V is the internal reference voltage between LN and SLPE; its value can be adjusted by external resistor RVA.
Ip (mA) 1.6
(a)
(b)
R VA(R E) SLP EG-
0.8 (a') (b') 0 0 1 2
(a) Ip = 1.94 mA (b) Ip = 1.54 mA (a) Ip = 0.54 mA (b) Ip = 0.16 mA Iline = 15 mA R1 = 620 and R9 = 20 Curve (a) and (a) are valid when the receiving amplifier is not driven or when MUTE = HIGH. Curve (b) and (b) are valid when the receiving amplifier is driven and when MUTE = LOW. Vo(RMS) = 150 mV, RT = 150 .
R VA(
out E) with -SLP G RE
= 20 k
3 VCC (V) 4
* R9 = external resistor between SLPE and VEE1 (20 in basic operation). With R9 = 20 , this results in: * VLN = 3.3 0.25 V at Iline = 15 mA * VLN = 4.1 0.3 V at Iline = 15 mA, RVA(REG-SLPE) = 33 k * VLN = 4.4 0.35 V at Iline = 15mA, RVA(REG- SLPE) = 20 k The preferred value for R9 is 20 . Changing R9 influences microphone gain, DTMF gain, the gain control characteristics, sidetone and the DC characteristics (especially the low voltage characteristics). In normal conditions, ISLPE >> (ICC + 0.25 mA) and the static behaviour is equivalent to a voltage regulator diode with an internal resistance of R9. In the audio frequency range the dynamic impedance is determined mainly by R1. The equivalent impedance of the circuit in audio frequency range is shown in Fig.8. The internal reference voltage VLN-SLPE can be increased by external resistor RVA(REG-SLPE) connected between REG and SLPE. The voltage VLN-SLPE is shown as a function of RVA(REG-SLPE) in Fig.9. Changing the reference voltage influences the output swing of both sending and receiving amplifiers. At line currents below 8 mA (typ.), the DC voltage dropped across the circuit is adjusted to a lower level automatically (approximately 1.8 V at 2 mA). This gives the possibility of operating more telephone sets in parallel with DC line voltages (excluding polarity guard) down to an absolute minimum of 1.8 V. At line currents below 8 mA (typ.), the circuit has limited sending and receiving levels.
Fig.6
Maximum current Ip with respect to Fig.5 available from Vcc for peripheral circuitry with VCC > 2.2 V.
The maximum AC output swing on the line at low currents is influenced by R16 (limited by current) and the maximum output swing on the line at high currents is influenced by DC voltage VLN-SLPE (limited by voltage). In both these situations, the internal dynamic limiter in the sending channel prevents distortion when the microphone is overdriven. The maximum AC output swing on LN is shown in Fig.7; practical values for R16 are from 200 to 600 and this influences both maximum output swing at low line currents and the supply capabilities. When the SLPE pin is the reference for peripheral circuits, inputs MUTE, PD and DTMF must be referenced to SLPE. This is achieved by connecting pin VEE2 to pin SLPE; VEE2 being the reference of MUTE, PD and DTMF input stages. Active microphones can be supplied between VCC and VEE1 as shown in Fig.5. Low power circuits that provide MUTE, PD and DTMF inputs to the TEA1064B can also be powered from VCC (see Fig.6 for the supply capability of March 1994 8
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
MBA437
handbook, halfpage
6
VLN(p-p) (V) 4
handbook, halfpage
LN Leq Vref Rp REG C3 4.7 F R1 VCC C1 VEE1
Ip = 2 0 mA 1.4 mA 2.7 mA
R9 20
MBA438
0 10 20 Iline (mA) 30
R16 = 392 ; Ip with respect to Fig.3.
Fig.7
Typical AC output swing at total harmonic distortion (THD) = 2% on the line as a function of line current with peripheral supply current as a parameter.
Leq = C3 x R9 x Rp Rp = 15 k
Fig.8
Equivalent impedance between LN and VEE.
handbook, full pagewidth
7.8 Vref (V) 6.6
MBA467
5.4
4.2 with RVA infinite 3.0 0 40 80 120 RVVA (REG-SLPE) (k)
VLN = VLN-SLPE + ({Iline - 1.55 x 10-3 A} x R9).
Fig.9
Internal reference voltage VLN-SLPE as a function of resistor RVA(REG-SLPE) for line currents between 11 mA and 140 mA.
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
Microphone inputs MIC+ and MIC- and gain pins GAS1 and GAS2 The TEA1064B has symmetrical microphone inputs, its input impedance is 64 k (2 x 32 k) and its voltage amplification is typically 52 dB with R7 = 68 k. Either dynamic, magnetic or piezo-electric microphones can be used, or an electret microphone with a built-in FET buffer. Arrangements for the microphone types are shown in Fig.10.
TEA1064B
The gain of the microphone amplifier is proportional to external resistor R7 connected between GAS1 and GAS2 and with this it can be adjusted between 44 dB and 52 dB to suit the sensitivity of the transducer. An external 100 pF capacitor (C6) is required between GAS1 and SLPE to ensure stability. A larger value of C6 may be chosen to obtain a first-order low-pass filter with a cut-off frequency corresponding to the time constant R7 x C6.
handbook, full pagewidth
VCC MIC+ 9
(1)
MIC- 8
16
MIC+ 9
MIC-
8
MIC+
9 11 VEE1
MIC-
8
MBA439
(a)
(b)
(c)
Resistor (1) may be connected to reduce the terminating impedance, or for sensitive types a resistive attenuator can be used to prevent overloading the microphone inputs.
Fig.10 Microphone arrangements (a) magnetic or dynamic microphone (b) electret microphone (c) piezo-electric microphone currents.
March 1994
10
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
Dynamic limiter (microphone) pin DLS/MMUTE A low level at the DLS/MMUTE pin inhibits the microphone inputs MIC+ and MIC- but has no influence on the receiving and DTMF amplifiers. Removing the low level at the DLS/MMUTE pin provides the normal function of the microphone amplifier after a short time determined by the capacitor connected to DLS/MMUTE pin. The microphone mute function can be realised by a simple switch as shown in Fig.11. To prevent distortion of the transmitted signal, the gain of the sending amplifier is reduced rapidly when peaks of the signal on the line exceed an internally-determined threshold. The time in which gain reduction is effected (attack time) is very short. The circuit stays in the gain-reduced condition until the peaks of the sending signal remain below the threshold level. The sending gain then returns to normal after a a time determined by the capacitor connected to DLS/MMUTE (release time). The internal threshold adapts automatically to the DC voltage setting of the circuit (VLN-SLPE). This means that the maximum output swing on the line will be higher if the DC voltage dropped across the circuit is increased. Fig.12 shows the maximum possible output swing on the line as a function of the DC voltage drop (VLN-SLPE) with Iline - Ip as a parameter. The internal threshold level is lowered automatically if the DC current in the transmit output stage is insufficient. This prevents distortion of the sending signal in applications using parallel-connected telephones or telephones operating over long lines, for example. Dynamic limiting also considerably improves sidetone performance in over-drive conditions (less distortion; limited sidetone level).
10 VLN(p-p) (V) 8
TEA1064B
handbook, halfpage
DLS/MMUTE R17 3.3 k
7
VEE1
11
MBA440
Fig.11 Microphone-mute function.
MBA464
Iline-Ip (mA) 25 23 21 19 17 15 13 11
6
4
2
0
3
3.5
4
4.5
5 5.5 VLN-VSLPE (V)
R16 = 392 .
Fig.12 Typical output swing on line as a function of the DC voltage drop VLN-SLPE with Iline - Ip as a parameter.
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
Receiving amplifier IR, QR+, QR- and GAR The receiving amplifier has one input IR and two complimentary outputs, QR+ (non-inverting) and QR- (inverting). These outputs may be used for single-ended or differential drive, depending on the type and sensitivity of the earpiece used (see Fig.13). Gain from IR to QR+ is typically 31 dB with R4 = 100 k, sufficient for
TEA1064B
low-impedance magnetic or dynamic earpieces which are suitable for single-ended drive. By using both outputs (differential drive) the gain is increased by 6 dB. Differential drive can be used when the earpiece impedance exceeds 450 as with high-impedance dynamic, magnetic or piezo-electric earpieces.
handbook, full pagewidth
5 4 11
QR+ QR- VEE
5
QR+
5
QR+
(1)
5
QR+
(2)
4
QR-
4
QR-
4
QR-
MBA441
(a)
(b)
(c)
(d)
Resistor (1) may be connected to prevent distortion (inductive load). Resistor (2) is required to increase the phase margin (stability with capacitive load).
Fig.13 Alternative receiver arrangements (a) dynamic earpiece with an impedance less than 450 (b) dynamic earpiece with an impedance more than 450 (c) magnetic earpiece with an impedance more than 450 (d) piezo-electric earpiece.
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
The output voltage of the receiving amplifier is specified for continuous-wave drive. Fig.14 shows the maximum output swing of the receiving amplifier as a function of the DC voltage drop (VLN). The maximum output voltage will be higher under speech conditions, where the ratio of the peak to the RMS value is higher. The gain of the receiving amplifier can be adjusted to suit the sensitivity of the transducer used. The adjustment range is between 20 dB and 39 dB with single-ended drive and between 26 dB and 45 dB with differential drive. The gain is proportional to the external resistor R4 connected between GAR and QR+. The overall gain between LN and QR+ can be found by subtracting the attenuation of the anti-sidetone network (32 dB) from the amplifier gain. Two external capacitors (C4 = 100 pF and C7 = 10 x C4 = 1 nF) ensure stability. A larger value may be chosen to obtain a first-order low-pass filter. The cut-off frequency corresponds with time constant R4 x C4. The relationship C7 = 10 x C4 must be maintained.
TEA1064B
handbook, halfpage
1.5
MLB031
VQR(rms) (V) 1.0
(1)
(2)
0.5
(3)
0
3
4
5
VLN (V)
6
Valid for both options; THD = 2%, Iline = 15 mA. Curve (1) is for a differential load of 47 nf (series resistance = 100 ; f = 3400 Hz. Curve (2) is for a differential load of 450 ; f = 1 kHz. Curve (3) is for a single-ended load of 150 ; f = 1 kHz.
Fig.14 Typical output swing of the receiving amplifier as a function of DC voltage drop VLN with the load at the receiver output as parameter.
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
Automatic gain control input AGC Automatic compensation of line loss is obtained by connecting a resistor (R6) between AGC and VEE1. This automatic gain control varies the gain of the microphone amplifier and receiving amplifier in accordance with the DC line current. The control range is 6.1 dB; this corresponds to a 5 km line of 0.5 dB diameter copper twisted-pair cable (DC resistance = 176 /km, average attenuation = 1.2 dB/km). The DTMF gain is not affected by this feature.
TEA1064B
The value of R6 must be chosen with reference to the exchange supply voltage and its feeding bridge resistance (see Fig.15 and Table 1). Different values of R6 give the same line current ratios at the start and the end of the control range. If automatic line-loss compensation is not required the AGC pin can be left open-circuit, the amplifiers then provide their maximum gain.
handbook, full pagewidth
0 Avd (dB) -2
R6 =
MLB030
-4 R6 = 66.5 k 93.1 k 118 k
-6
0
20
40
60
80
100
120
140 Iline (mA)
Fig.15 Variation of gain as a function of line current with R6 as a parameter; R9 = 20 .
Table 1
Values of R6 giving optimum line-loss compensation at various values of exchange supply voltage (Vexch) and exchange feeding bridge resistance (Rexch); R9 = 20 Rexch () 400 35 84.5 118 x 600 R6 (k) 66.5 93.1 x x 77.8 97.6 x 66.5 84.5 800 1000
Vexch (V)
48 60
March 1994
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
VEE2 input VEE2 is the reference for MUTE, POWER-DOWN and DTMF inputs. These signals are referenced to VEE1 when generated by peripherals powered between VCC and VEE1, but they can also be referenced to SLPE when peripherals are powered as shown in Fig.3. In the first instance (reference to VEE1), VEE2 has to be connected to VEE1. In the second instance (reference to SLPE), VEE2 has to be connected to SLPE. MUTE input (see notes 1 and 2) MUTE = HIGH enables the DTMF input and inhibits the microphone and receiving amplifier inputs. MUTE = LOW or open-circuit disables the DTMF input and enables the microphone and receiving amplifier inputs. Switching MUTE gives negligible clicks at the telephone outputs and on the line. Dual-tone multi-frequency input DTMF (see note 1) When the DTMF input is enabled, dialling tones may be sent on the line. The voltage gain between DTMF-VEE2 and LN-VEE1 is typically 26.5 dB less than the gain of the microphone amplifier and varies with R7 in the same way as the gain of the microphone amplifier. This means that the tone level at the DTMF input has to be adjusted after setting the gain of the microphone amplifier. With R7 = 68 k the gain is typically 25.5 dB. The signalling tones can be heard in the earpiece at a low level (confidence tone). Power-down input PD (see notes 1. and 2.) During pulse dialling or register recall (timed loop break) the telephone line is interrupted; as a consequence it provides no supply for the transmission circuit connected to VCC or for the peripherals between VLN and SLPE. These supply gaps are bridged by the charges in the capacitors C1 and C15. The requirements on these capacitors are eased by an applied HIGH level to the PD input during the time of the loop break. This reduces the internal supply current ICC1 from 1.3 mA (typ.) to 60 A (typ.) and switches off the voltage regulator to prevent discharge via LN to VCC2.
TEA1064B
A HIGH level at PD also internally disconnects the capacitor at REG so that the voltage stabilizer has no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. When the power-down facility is not required, the PD pin can be left open-circuit or connected to VEE2. Sidetone suppression Suppression of the transmitted signal in the earpiece is obtained by the anti-sidetone network comprising R1//Zline, R2, R3, R8, R9 and Zbal (see Fig.16). Maximum compensation is obtained when the following conditions are fulfilled: (a) R9 x R2 = R1 x (R3 + {R8//Zbal}) (b) (Zbal/{Zbal + R8}) = (Zline/{Zline + R1}) If fixed values are chosen for R1, R2, R3 and R9, then condition (a) is always fulfilled provided R8//Zbal << R3 To obtain optimum sidetone suppression, condition (b) has to be fulfilled, resulting in: Zbal = (R8/R1) x Zline = k x Zline Where k is a scale factor; k = (R8/R1). The scale factor k (value of R8) is chosen to meet the following criteria: * compatibility with a standard capacitor from the E6 or E12 range for Zbal * Zbal//R8 << R3 to fulfil condition (a) and thus ensure correct anti-sidetone bridge operation * Zbal + R8 >> R9 to avoid influencing the transmit gain In practise Zline varies considerably with the line length and line type. Therefore the value chosen for Zbal should be for an average line length giving satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line.
March 1994
15
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
EXAMPLE The line impedance for which optimum suppression is to be obtained can be represented by 210 + (1265 //140 nF). This represents a 5 km line of 0.5 mm diameter copper twisted-pair cable matched with 600 (176 /km; 38 nF/km). With k = 0.64 this results in : R8 = 390 ; Zbal = 130 + (820 //220 nF). The anti-sidetone network for the TEA1060 family shown in Fig.16 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio-frequency range.
TEA1064B
Alternatively a conventional Wheatstone bridge can be used as an anti-sidetone circuit (see Fig.17). Both bridge types can be used with either resistive or complex set impedances. (More information on the balancing of anti-sidetone bridges can be obtained in our publication "Versatile speech transmission ICs for electronic telephone sets", order number 9398 341 10011). Notes 1. The reference level used for the MUTE, DTMF and PD inputs is VEE2. 2. A LOW level for any of these pins is defined by connection to VEE2, a HIGH level is defined as a voltage greater than VEE2 + 1.5 V and smaller than VCC + 0.4 V.
handbook, full pagewidth
LN
Zline
R1
R2
VEE2
im R3 R9 R8 SLPE Zbal
IR Rt
MBA465
Fig.16 Equivalent circuit of TEA1060 family anti-sidetone bridge.
handbook, full pagewidth
LN
Zline
R1
Zbal
VEE2
im
IR Rt
R9
R8
RA
SLPE
MBA466
Fig.17 Equivalent circuit of an anti-sidetone network in the Wheatstone bridge configuration.
March 1994
16
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
LIMITING VALUES In accordance with the Absolute Maximum System (IEC134). SYMBOL VLN VLN VLN PARAMETER positive line voltage continuous repetitive line voltage during switch-on line interruption repetitive peak line voltage one 1 ms pulse per 5 s line current TEA1064B TEA1064BT Vi Ptot input voltage on pins other than LN total power dissipation TEA1064B TEA1064BT Tamb Tstg Tj Notes operating ambient temperature storage temperature junction temperature R9 = 20 ; note 2 - - -25 -40 - R9 = 20 ; R10 = 13 ; see Fig.22 R9 = 20 note 1 note 1 - - CONDITIONS - - - MIN.
TEA1064B
MAX. 12 13.2 28
UNIT V V V
ILN
140 140
mA mA V mW mW C C C
VEE1-0.7 VCC+0.7 717 555 +75 +125 +125
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 18 and 19 to determine the current as a function of the required voltage and the temperature. 2. Calculated for the maximum ambient temperature specified Tamb = 75 C and a maximum junction temperature of 125 C. THERMAL RESISTANCE SYMBOL Rth j-a SOT146 SOT163A (note 1) Note 1. Mounted on glass epoxy board 41 x 19 x 1.5 mm. PARAMETER from junction to ambient in free air 70 K/W 90 K/W THERMAL RESISTANCE
March 1994
17
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
handbook, halfpage I
160 LN (mA) 140
MLB032
handbook, halfpage I
150 LN (mA) 130
MSA546
120
(1)
110
100
(2)
90
(1) (2)
80
(3)
70
(3)
(4)
60
50
(4)
40 2 4 6 8 10 12 VLN-VSLPE (V)
30 2 4 6 8 10 12 VLN-VSLPE (V)
(1) Tamb = 45 C; Ptot = 1143 mW. (2) Tamb = 55 C; Ptot = 1000 mW. (3) Tamb = 65 C; Ptot = 857 mW. (4) Tamb = 75 C; Ptot = 714 mW.
(1) Tamb = 45 C; Ptot = 888 mW. (2) Tamb = 55 C; Ptot = 777 mW. (3) Tamb = 65 C; Ptot = 666 mW. (4) Tamb = 75 C; Ptot = 555 mW.
Fig.18 TEA1064B safe operating area.
Fig.19 TEA1064BT safe operating area.
March 1994
18
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
CHARACTERISTICS Iline = 11 to 140 mA; VEE1 = 0 V; f = 800 Hz; Tamb = 25 C; RL = 600 ; tested in the circuits of Fig.20 or Fig.21; VEE2 connected to SLPE; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies LN and VCC (pins 1 and 16) VLN DC line voltage: voltage drop between LN and VEE1 MIC-, MIC+ inputs open-circuit; without RVA Iline = 2 mA Iline = 4 mA Iline = 7 mA Iline = 11 mA Iline = 15 mA Iline = 100 mA Iline = 140 mA VLN/T VLN variation with temperature voltage drop over circuit with RVA connected between REG and SLPE RVA = 33 k RVA = 20 k ICC internal supply current into pin 16 VCC = 2.8 V PD = LOW PD = HIGH VCC supply voltage available for peripheral circuitry VEE2 connected to VEE1 Iline = 15 mA; MUTE = HIGH; see Fig.5 Ip = 0.54 mA Ip = 0 mA Vp supply voltage available for peripheral circuitry Iline = 15 mA Ip = 1.4 mA Ip = 2.7 mA; RREG-SLPE = 20 k Microphone inputs MIC- and MIC+ (pins 8 and 9) Zi input impedance differential single-ended CMRR Gv Gvf common mode rejection ratio voltage gain (see Fig.20) variation of Gv with frequency referred to 0.8 kHz Iline = 15 mA; R7 = 68 k f = 300 and 3400 Hz 51 25.5 - 51 -0.5 64 32.0 82 52 0.1 77 38.5 - 53 +0.5 k k dB dB dB 2.5 2.9 2.7 3.1 - - V V 2.2 2.5 2.4 2.7 - - V V - - 1.3 60 1.6 82 mA A 3.8 4.05 4.1 4.4 4.4 4.75 V V Iline = 15 mA - - - - 3.25 - - -3 1.8 2.2 3.2 3.4 3.5 5.25 6.1 -1 - - - - 3.75 6.05 7.0 +1 V V V V V V V mV/K
March 1994
19
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
SYMBOL GvT PARAMETER variation of Gv with temperature referred to 25 C CONDITIONS without R6; Iline = 50 mA; Tamb = -25 to +75 C - MIN. TYP. 0.2
TEA1064B
MAX. -
UNIT dB
DTMF input (pin 12) Zi Gv Gvf input impedance voltage gain (see Fig.20) variation of Gv with frequency referred to 0.8 kHz f = 300 and 3400 Hz f = 697 and 1633 Hz GvT variation of Gv with temperature referred to 25 C Iline = 50 mA; Tamb = -25 to +75 C -0.5 -0.2 - 0.01 0.05 0.2 +0.5 +0.2 0.5 dB dB dB Iline = 15 mA; R7 = 68 k 16.8 24.5 20.7 25.5 24.6 26.5 k dB
Gain adjustment inputs GAS1 and GAS2 (pins 2 and 3) Gv transmitting amplifier gain adjustment range -8 - +0 dB
Sending amplifier output LN (pin 1) DYNAMIC LIMITER VLN(p-p) output voltage swing (peak-to-peak value) total harmonic distortion Vi = 3.6 mV +10 dB Vi = 3.6 mV +15 dB VLN(p-p) output voltage swing (peak-to-peak value) Vi = 3.6 mV +10 dB Ip = 1.4 mA Ip = 2.7 mA Ip = 0 mA; Iline = 7 mA Ip = 0 mA; Iline = 4 mA dynamic behaviour of limiter tatt trel Vno(RMS) attack time Vmic jumps from 2 mV to 40 mV release time Vmic jumps from 40 mV to 2 mV noise output voltage (RMS value) Iline = 15 mA; R7 = 68 k; 200 between MIC- and MIC+; psophometrically weighted (P53 curve) C16 = 470 nF - 50 - 1.5 150 -72 5.0 - - ms ms dBmp 3.55 3.25 - - 3.8 3.5 1.8 0.9 4.05 3.75 - - V V V V - - 1.5 2.8 - - % % Iline = 15 mA; R7 = 68 k; Vi(RMS) = 3.6 mV 3.4 3.8 4.2 V
THD
March 1994
20
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1064B
MAX.
UNIT
Receiving amplifier input IR (pin 13) Zi Zo Gv input impedance 17 - 21 25 - k
Receiving amplifier outputs QR- and QR+ (pins 4 and 5) output impedance voltage gain (see Fig.21) single-ended differential Gvf GvT variation of Gv with frequency referred to 0.8 kHz variation of Gv with temperature referred to 25 C output voltage (RMS value) single-ended Iline = 15 mA; R4 = 100 k RT = 300 RT = 600 f = 300 and 3400 Hz without R6; Iline = 50 mA; Tamb = -25 to +75 C TDA = 2%; sinewave drive; R4 = 100 k; Iline = 15 mA RT = 150 RT = 450 CT = 47 nF; Rs = 100 ; f = 3400 Hz Ip = 0 mA; TDA = 10%; sinewave drive; R4 = 100 k; RT = 150 Iline = 4 mA Iline = 7 mA Vno(RMS) noise output voltage (RMS value) Iline = 15 mA; R4 = 100 k; psophometrically weighted (P53 curve); pin IR open-circuit RT = 300 RT = 600 see Fig.21; S1 in position 2; 200 between MIC- and MIC+; single-ended; RT = 300 R7 = 68 k R7 = 24.9 k - - 100 65 - - V V - - 45 90 - - V V - - 20 160 - - mV mV - - - 0.2 0.37 0.52 - - - V V V 30 36 -0.5 - 31 37 -0.2 0.2 32 38 0 - dB dB dB dB 4
Vo(RMS)
single-ended differential differential
Vo(RMS)
output voltage (RMS value)
single-ended differential Vno(RMS) noise output voltage (RMS value)
March 1994
21
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
SYMBOL Gv PARAMETER CONDITIONS MIN. -11 - TYP.
TEA1064B
MAX. +8
UNIT
Gain adjustment input GAR (pin 6) receiving amplifier gain adjustment range dB
MUTE input (pin 14) VIH VIL Imute Gv Gv HIGH level input voltage LOW level input voltage input current change of microphone amplifier gain at mute on voltage gain from input DTMF-SLPE to QR+ output with mute on MUTE = HIGH MUTE = HIGH; single-ended load; RL = 300 1.5 +VEE2 - 0 - - - - 11 -100 -18 VCC +0.4 20 - - V A dB dB 0.3 +VEE2 V
Power-down input PD (pin 15) VIH VIL IPD HIGH level input voltage LOW level input voltage input current 1.5 +VEE2 - 0 - - 5 VCC1 +0.4 V 0.3 +VEE2 V 10
Automatic gain control input AGC (pin 18) controlling the gain from IR (pin 13) to QR+, QR- (pins 4, 5) and the gain from MIC+, MIC- (pins 8, 9) to LN (pin 1) Gv Iline Iline Gv gain control range with respect to Iline = 15 mA highest line current for maximum gain lowest line current for minimum gain change of gain between Iline = 15 and 35 mA LOW level input voltage input current at LOW level input voltage release time after a LOW level on pin 7 change of microphone amplifier gain at LOW level input voltage on pin 7 C16 = 470 nF R6 = 93.1 k (between pins 18 and 11) Iline = 75 mA -5.7 - - -0.9 -6.1 24 61 -1.4 -6.5 - - -1.9 dB mA mA dB
Microphone mute input DLS/MMUTE (pin 7) VIL IIL trel Gv VEE1 -85 - - - -60 30 -100 VEE1 +0.3 V -35 - - A ms dB
March 1994
22
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handbook, full pagewidth
Philips Semiconductors
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
R16 392 R1 16 13 9 Vi C1 100 F 12 14 DTMF MUTE GAS1 PD DLS/MMUTE VEE2 VEE1 19 C16 470 nF 11 GAS2 STAB SLPE 10 R5 3.6 k 20 R9 20
MBA443
Iline 1 LN QR- 4 100 F RL 600 R4 100 k C4 100 pF C7 1 nF Vo
620
VCC IR MIC+
QR+ 8 MIC-
5
TEA1064B
GAR
6
11 to 140 mA
23
Ip 15 10 F C15 220 F 7 Vi
2 R7 68 k
3
C6 100 pF
REG 17 C3 4.7 F
AGC 18 R6
Product specification
TEA1064B
For measuring gain from MIC+ and MIC- the MUTE input should be LOW or open-circuit. For measuring the DTMF input, the MUTE input should be HIGH. Inputs not being tested should be open-circuit.
Fig.20 Test circuit for defining voltage gain of MIC-, MIC+ and DTMF inputs; voltage gain (Gv) is defined as 20log Vo/Vi.
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R16 392 R1 16 VCC IR MIC+ QR+ 8 C1 100 F 10 F Vi 12 14 15 7 130 R8 390 220 nF MIC- DTMF MUTE GAS1 PD DLS/MMUTE VEE2 VEE1 19 C16 470 nF 11 GAS2 STAB SLPE 10 R5 3.6 k 20 R9 20
MBA444
Philips Semiconductors
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
R2 100 nF 2 1 9 130 k S1 13
Iline 1 LN QR- 4 ZT 5 R4 100 k C4 100 pF C7 1 nF 2 R7 68 k Vo 100 F
620
RL 600
TEA1064B
GAR
6
11 to 140 mA
handbook, full pagewidth
24
Ip
R5 3.92 k
C15 220 F
3
C6 100 pF
REG 17 C3 4.7 F
AGC 18 R6
820
Product specification
TEA1064B
Fig.21 Test circuit for defining voltage gain of the receiving amplifier; voltage gain (Gv) is defined as 20logVo/Vi (with S1 in position 1).
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k, full pagewidth
March 1994
R10 13 BAS11 (2x) R2 130 k 1 C5 100 nF 13 LN IR 4 telephone BZW14 line (2x) R13 R3 3.92 k R4 100 k C7 C4 100 pF 6 1 nF 9 MIC+ GAR 5 QR+ QR-
The basic application circuit is shown in Fig.22 and a typical application is shown in Fig.23.
APPLICATION INFORMATION
Philips Semiconductors
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
R16 R1 620 16 VCC DTMF 12 from dial and control circuits C1 100 F 392
+
MUTE
14
TEA1064B
PD
15 C15 220 F
-
DLS/MMUTE 7
25
R8 390 Zbal
R14 8 MIC- SLPE GAS1 GAS2 20 C6 R9 20 100 pF 2 3 R7 68 k REG 17 C3 4.7 F AGC 18 VEE2 STAB VEE1 10 R5 3.6 k 11 C16 470 nF 19 R17 3.3 k
R6
MBA445
Product specification
TEA1064B
The diode bridge and R10 limit the current into, and the voltage across, the circuit during line transients. A different protection arrangement is required for pulse dialling or register recall.
Fig.22 Basic application of TEA1064B with SLPE as supply reference for peripherals, shown here with piezo-electric earpiece and DTMF dialling.
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
handbook, full pagewidth
LN DTMF cradle contact
VDD DTMF M FL VSS
MBA446
TEA1064B MUTE
PD VEE1 SLPE VEE2
PCD3310
telephone line BSN254A
The broken line indicates optional flash (register recall by timed loop break).
Fig.23 Typical DTMF-pulse set application circuit (simplified) showing the TEA1064B with the CMOS bilingual dialling circuit PCD3310.
March 1994
26
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
PACKAGE OUTLINES DIP20: plastic dual in-line package; 20 leads (300 mil)
TEA1064B
SOT146-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 20 11 MH wM (e 1)
pin 1 index E
1
10
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.020 A2 max. 3.2 0.13 b 1.73 1.30 0.068 0.051 b1 0.53 0.38 0.021 0.015 c 0.36 0.23 0.014 0.009 D
(1)
E
(1)
e 2.54 0.10
e1 7.62 0.30
L 3.60 3.05 0.14 0.12
ME 8.25 7.80 0.32 0.31
MH 10.0 8.3 0.39 0.33
w 0.254 0.01
Z (1) max. 2.0 0.078
26.92 26.54 1.060 1.045
6.40 6.22 0.25 0.24
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 REFERENCES IEC JEDEC EIAJ SC603 EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-05-24
March 1994
27
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
TEA1064B
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
March 1994
28
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA1064B
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
March 1994
29
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1064B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1994
30
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
NOTES
TEA1064B
March 1994
31
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/00/02/pp32
Date of release: March 1994
Document order number:
9397 750 nnnnn

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